Miyazaki, 2-4 Dec. 2011
From Dec 2nd to 4th, the first semester meeting of the “New Generation CPV” (NGCPV) Project was held in Miyazaki (Japan).
Most spectacular result presented, was that of SHARP of a 43.2% efficient cell at 413 suns. Also presented the week before at PVSEC-21 in Fukuoka, SHARP reserachers report this result in InGaP/GaAs/InGaAs inverted triple junction solar cell. This has been achieved by reducing series resistance through an increase of peak current in the tunnel junction, and by reducing surface sheet resistance.
Yoshida et al. “Development of InGaP/GaAs/InGaAs Inverted Triple Junction Solar Cells for Concentrator Application” Conference Records of 21st International Photovoltaic Science and Engineering Conference, Fukuoka, 2011.
Among the invited speakers to this meeting was Hans J. Queisser, presently emeritus at Max-Planck-Institute for Solids, that gave a talk on his seminal paper of 1961 in which together with William B. Shockley, they calculated the efficiency limit for a solar cell assuming only radiative recombination processes.
